Electron spin resonance study on low-pressure-baked (111) Si surfaces interacting with adsorbed gases
- 16 November 1979
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 56 (1) , 111-115
- https://doi.org/10.1002/pssa.2210560111
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Electron spin resonance study on low-pressure-baked silicon surfacesPhysica Status Solidi (a), 1979
- Model of structural transformations on the chemically etched silicon surface during thermal oxidationPhysica Status Solidi (a), 1978
- Growth of thin SiO2 films on clean Si (111) surfaces by low-pressure oxidation and their evaporationPhysica Status Solidi (a), 1977
- X-ray photoelectron spectroscopy of thermally grown silicon dioxide films on siliconChemical Physics Letters, 1975
- Low-Temperature EPR Measurements onin situVacuum-Cleaved SiliconPhysical Review Letters, 1975
- Oxide Growth on Etched Silicon in Air at Room TemperatureJournal of the Electrochemical Society, 1975
- Investigation of passivation mechanism in silicon surfaces by electron spin resonanceSurface Science, 1973
- Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance IJapanese Journal of Applied Physics, 1971
- Electron Paramagnetic Resonance from Clean Single-Crystal Cleavage Surfaces of SiliconPhysical Review B, 1968
- Properties of Clean Silicon Surfaces by Paramagnetic ResonanceJournal of Applied Physics, 1966