Ta Film Properties for X-Ray Mask Absorbers
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11R)
- https://doi.org/10.1143/jjap.29.2616
Abstract
The properties of absorber materials for X-ray masks which can be patterned by a subtractive process are investigated. Highly pure film can be deposited using Xe rather than Ar as a working gas of RF sputtering. The stress of the Ta film can be controlled more precisely than either Re or W. Ta film deposited by RF sputtering is highly oriented, and has a high purity and a high density. Furthermore, its stress does not change even after annealing at 400°C.Keywords
This publication has 6 references indexed in Scilit:
- X-ray Lithography: Novel Fabrication Process for SiC/W SteppermasksJapanese Journal of Applied Physics, 1989
- Low-stress tantalum absorbers deposited by sputtering for x-ray masksJournal of Vacuum Science & Technology B, 1989
- Ta/SiN-Structure X-Ray Masks for Sub-Half-Micron LSIsJapanese Journal of Applied Physics, 1989
- Fully scaled 0.5 μm metal–oxide semiconductor circuits by synchrotron x-ray lithography: Mask fabrication and characterizationJournal of Vacuum Science & Technology B, 1988
- Low-energy x-ray interaction coefficients: Photoabsorption, scattering, and reflectionAtomic Data and Nuclear Data Tables, 1982
- Internal stresses in amorphous silicon films depositied by cylindrical magnetron sputtering using Ne, Ar, Kr, Xe, and Ar+H2Journal of Vacuum Science and Technology, 1981