Electrical properties of gallium- and antimony-doped silicon layers, grown by solid phase epitaxy in a molecular beam epitaxial growth chamber

This publication has 6 references indexed in Scilit:

• Crystal quality of solid phase epitaxially grown silicon
  Journal of Vacuum Science & Technology B, 1988
• Comparison of carrier profiles from spreading resistance analysis and from model calculations for abrupt doping structures
  Applied Physics Letters, 1987
• Ionization of impurities in silicon
  Solid-State Electronics, 1986
• Dependence of hole transport on Ga doping in Si molecular beam epitaxy layers
  Applied Physics Letters, 1986
• Modeling of carrier mobility against carrier concentration in arsenic-, phosphorus-, and boron-doped silicon
  IEEE Transactions on Electron Devices, 1983
• The dopant density and temperature dependence of hole mobility and resistivity in boron doped silicon
  Solid-State Electronics, 1978