Improving material characteristics and reproducibility of MBE HgCdTe
- 1 June 1997
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 26 (6) , 493-501
- https://doi.org/10.1007/s11664-997-0183-8
Abstract
No abstract availableKeywords
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- Uniform low defect density molecular beam epitaxial HgCdTeJournal of Electronic Materials, 1996
- Origin of void defects in Hg1−xCdxTe grown by molecular beam epitaxyJournal of Electronic Materials, 1995
- Minority carrier lifetime in mercury cadmium tellurideSemiconductor Science and Technology, 1993
- The exponential optical absorption band tail of Hg1−xCdxTeJournal of Applied Physics, 1984