On the gain mechanism in GaN based laser diodes
- 21 August 1998
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 108 (2) , 105-109
- https://doi.org/10.1016/s0038-1098(98)00309-3
Abstract
No abstract availableKeywords
Funding Information
- Core Research for Evolutional Science and Technology
- Japan Science and Technology Corporation
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 8 references indexed in Scilit:
- Polarization dependent quantum beats of homogeneously broadened excitons.Optics Express, 1997
- Failure of the modal gain model in a GaN based laser diodeSolid State Communications, 1997
- Luminescences from localized states in InGaN epilayersApplied Physics Letters, 1997
- Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser DiodesMRS Internet Journal of Nitride Semiconductor Research, 1997
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996
- Pseudopotential band structure of indium nitridePhysical Review B, 1986
- Infrared Lattice Vibrations and Free-Electron Dispersion in GaNPhysical Review B, 1973
- DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALSApplied Physics Letters, 1971