Extremely high negative photoconductivity in p-modulation-doped GaAs quantum wells
- 7 March 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (10) , 801-803
- https://doi.org/10.1063/1.99288
Abstract
In p‐modulation‐doped quantum wells of GaAs/AlGaAs extremely high negative photoconductivity is observed at low temperatures. The in‐plane sheet resistance can be increased by a factor of more than 60 with illumination of less than 1 W/cm2. Spectral analysis shows that the effect is mainly due to hole trapping in the potential minima of AlGaAs and subsequent recombination of minority electrons.Keywords
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