Quantum electron transport through narrow constrictions in semiconductor nanostructures

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Abstract
Detailed numerical results, with emphasis on the role of disorder and constriction geometry, are presented for the calculated conductance of quantum point contacts between high-mobility two-dimensional electron systems fabricated on semiconductor nanostructures. The conductance is calculated from the two-terminal multichannel transmission matrix formalism using the recursive single-particle Green’s-function technique. The Green’s functions are obtained recursively for a tight-binding two-dimensional disordered Anderson lattice model representing the constriction. The conductance is calculated as a function of the shape and the size of the constriction (i.e., its geometry) and the elastic disorder in the system.