Highly producible monolithic Q-band MESFET VCO
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
The authors describe a highly integrated fully monolithic Q-band voltage-controlled oscillator (VCO) that was built on a uniformly doped epitaxially grown substrate using 0.35- mu m gates. This FET-based oscillator delivered greater than 90 mW of output power at a frequency of 40 GHz with 2.8 GHz of tuning bandwidth. Tuning was achieved via an integrated varactor. A four-stage buffer amplifier and all bias networks have been included on chip to minimize performance variation due to assembly tolerances and load variations.Keywords
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