Effect of Bombardment by Glass-Forming Ions on Thermally Stimulated Ionic Conductivity of Sodium in Si $O_{2}$

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14 January 1974

journal article
research article
Published by American Physical Society (APS) in Physical Review Letters

Vol. 32 (2) , 65-67
https://doi.org/10.1103/physrevlett.32.65

Abstract

Thermally stimulated ionic conductivity measurements have been made of sodium motion through Si

O_{2}

grown thermally on silicon, and through thermal Si

O_{2}

after bombardment by

{Ar}^{+}

,

B^{+}

, and

P^{+}

ions of 5 keV energy. Ion implantation of Si

O_{2}

by glass-forming ions such as

B^{+}

or

P^{+}

creates traps at the Si

O_{2}

-Al interface that can markedly reduce

{Na}^{+}

motion in Si

O_{2}

.

Keywords

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