Relaxation effects on the (110) surface of GaAs
- 15 November 1976
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 14 (10) , 4724-4726
- https://doi.org/10.1103/physrevb.14.4724
Abstract
A commonly assumed model for the relaxed GaAs (110) surface is considered. This model can account for the insensitivity of the empty cation-derived surface states to metal overlayers, and the lack of evidence for occupied anion surface states in recent photoemission measurements. With relaxation of the surface, we find that the empty cation-derived surface band becomes more dispersive. The center of mass lies above the conduction-band minimum; however, the threshold of the surface band remains within the bulk band gap.Keywords
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