Carbon implantation in InP

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Abstract
Carbon implanted into InP at doses between 5×1012 and 5×1014 cm−2, either by itself or with B, Ga, Al, or P coimplantation at room temperature or 200 °C, displays donor activity for all annealing temperatures (600–900 °C; 10 s). Phosphorus coimplantation enhances the donor activation percentage over carbon‐only implantation, while coimplants of B, Ga, and Al reduce the donor activity. Peak carrier concentrations of 3×1019 cm−3 were obtained for C+P implantation at a dose of 5×1014 cm−2, followed by annealing at 700 °C for 10 s. Annealing at >700 °C leads to a reduction in net donor density through carbon site switching to produce self‐compensation. The C diffusivity is estimated to be less than 2.5×10−14 cm−2 s−1 at 800 °C.