Carbon in GaAs: Implantation and isolation characteristics
- 14 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (7) , 678-680
- https://doi.org/10.1063/1.101820
Abstract
Carbon was implanted into GaAs at doses between 1013 and 5×1014 cm−2, either by itself or with Ga coimplantation at room temperature or 200 °C. Activation percentages as high as 40% were obtained for C+Ga implants at 5×1014 cm−2 compared to 106 Ω/⧠) layers in C‐doped (p∼2×1020 cm−3) GaAs is possible by using oxygen bombardment doses above 5×1014 cm−2. Under these conditions the evolution of the implanted layer resistivity with annealing temperature can be described by the usual trap‐related compensation mechanism.Keywords
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