Three-Dimensional Analysis of Locally Implanted Atoms by MeV Helium Ion Microprobe
- 1 January 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (1R) , 105-109
- https://doi.org/10.1143/jjap.31.105
Abstract
Three-dimensional analysis by microprobe Rutherford backscattering (RBS) was used to nondestructively investigate inner-layer distributions of locally implanted atoms. Nickel-implanted silicon at 180 keV to a dose of 2×1017 cm-2 for the study of buried silicide synthesis was analyzed by a 1 MeV helium ion microprobe with a spot size of 4 µm. RBS-mapping and RBS-tomography images successfully indicated lateral and cross-sectional nickel distributions at the surface and the projected range without etching or cleaving. A micro-RBS spectrum revealed that a small amount of nickel scattered off the mask edges during implantation exists within a masked region.Keywords
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