Comparison of dry etch techniques for GaN
- 18 July 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (15) , 1408-1409
- https://doi.org/10.1049/el:19960943
Abstract
Dry etching of GaN in Cl2/H2/CH4/Ar has been compared using electron cyclotron resonance (ECR), inductively coupled plasma (ICP), and reactive ion etch (RIE) systems. GaN etch rates and surface morphology were obtained as a function of RF power, and showed significant improvements under high density plasma conditions.Keywords
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