Photon effect on electron-irradiated boron-doped silicon solar cell

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Abstract
The correlation between current-voltage characteristics measurements and deep level transient spectroscopy data on boron-doped silicon solar cells irradiated at room temperature by 1-MeV electron beam, followed or not by an illumination, is presented in this study. From such correlation, it is possible to conclude that the additional degradation induced by the light is due to the appearance of a defect in oxygen-lean silicon, which should be associated with the vacancy-oxygen-carbon complex [V-O-C]. A model, based upon the dissociation, enhanced by capture of photogenerated carriers, of the interstitial boron–interstitial oxygen complex, accounts for these observations: it verifies that the ‘‘photon effect’’ exists in oxygen-lean cells and is absent in high oxygen concentration cells.