Sub-100-nm Photolithography Based on Plasmon Resonance
- 1 June 2004
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 43 (6S)
- https://doi.org/10.1143/jjap.43.4017
Abstract
Sub-100-nm patterns have been patterned photolithographically using metallic masks with the exposure wavelength of 436 nm. Preliminary numerical simulations indicate a practical resolution limit for the lithographic process. The near-field distribution of light can be optimized to fabricate nanostructures including isolated nano-dots or nano-lines by changing the parameters of the mask. The results show the potential of plasmon lithography for attaining subwavelength features.Keywords
This publication has 22 references indexed in Scilit:
- Near-Field Distribution of Optical Transmission of Periodic Subwavelength Holes in a Metal FilmPhysical Review Letters, 2001
- Contrast in the evanescent near field of λ/20 period gratings for photolithographyApplied Optics, 2000
- 157 nm: Deepest deep-ultraviolet yetJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- Transmission Resonances on Metallic Gratings with Very Narrow SlitsPhysical Review Letters, 1999
- Extreme ultraviolet lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Challenges and progress in x-ray lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Electron beam lithography for 0.13 μm manufacturingJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Nanoimprint lithographyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Near-Field Optics: Microscopy, Spectroscopy, and Surface Modification Beyond the Diffraction LimitScience, 1992
- Theory of Diffraction by Small HolesPhysical Review B, 1944