On the Hall effect observation of ∼0.07 eV deep acceptor in gallium arsenide
- 15 May 1984
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 55 (10) , 3603-3604
- https://doi.org/10.1063/1.332959
Abstract
Hall effect observation of an ∼0.07 eV deep acceptor in GaAs single crystals converted to p type by heat treatment is reported. The acceptor is thought to be identical with the center responsible for the 1.44-eV photoluminescence band usually seen in GaAs, and attributed recently to an intrinsic defect, namely gallium on arsenic site.This publication has 21 references indexed in Scilit:
- Evidence of intrinsic double acceptor in GaAsApplied Physics Letters, 1982
- Infrared absorption of the 78-meV acceptor in GaAsApplied Physics Letters, 1982
- Photoluminescence identification of ∼77-meV deep acceptor in GaAsJournal of Applied Physics, 1982
- On the Concentration Dependence of the Thermal Impurity‐to‐Band Activation Energies in SemiconductorsPhysica Status Solidi (b), 1981
- Investigation of compensation in implanted n-GaAsJournal of Applied Physics, 1978
- Observations on residual donors in GaP LPERevue de Physique Appliquée, 1978
- Transport and Photoelectrical Properties of Gallium Arsenide Containing Deep AcceptorsJournal of Applied Physics, 1972
- Gamma-Radiation Damage in Epitaxial Gallium ArsenideJournal of Applied Physics, 1972
- Luminescence in Silicon-Doped GaAs Grown by Liquid-Phase EpitaxyJournal of Applied Physics, 1968
- Photoluminescence of Silicon-Compensated Gallium ArsenideJournal of Applied Physics, 1966