On the effect of power cycling stress on IGBT modules
- 1 June 1998
- journal article
- Published by Elsevier in Microelectronics Reliability
- Vol. 38 (6-8) , 1347-1352
- https://doi.org/10.1016/s0026-2714(98)00081-x
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditionsMicroelectronics Reliability, 1997
- Thermal characterization of IGBT power modulesMicroelectronics Reliability, 1997
- Temperature behavior of insulated gate transistor characteristicsSolid-State Electronics, 1985