Low-Temperature Molecular Beam Epitaxy Growth of Single Quantum Well GaAs/AlGaAs Lasers
- 1 May 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (5B) , L921
- https://doi.org/10.1143/jjap.30.l921
Abstract
We report on the low-temperature Molecular Beam Epitaxy (MBE) growth of single quantum well (SQW) GaAs/AlGaAs lasers under a low flux ratio. Lasing action was observed at a substrate temperature as low as 300°C. A threshold current density of 600 A/cm2 was obtained at the substrate temperature of 375°C, which is the lowest threshold current density below 400°C reported so far.Keywords
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