Contact Failures due to Polymer Films Formed during Via-Hole Etching
- 1 April 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (4A) , L559
- https://doi.org/10.1143/jjap.29.l559
Abstract
The contact resistance between the first metal and the second metal for double-level metallization was increased due to the polymer film formed during via-hole etching with C2F6/CHF3 plasma. The resistance increases with increasing over-etching time and etching pressure, or with decreasing electrode temperature for the via-hole etching. A Si-coated electrode is more effective in reducing the contact resistance than a carbon electrode is. Furnace heating at 380°C as a post-treatment is very effective in removing the etching polymer and in decreasing the contact resistance.Keywords
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