Correlation between defect density and Fermi-level position in a-Si:H
- 1 December 1989
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 114, 651-653
- https://doi.org/10.1016/0022-3093(89)90679-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Mechanisms of thermal equilibration in doped amorphous siliconPhysical Review B, 1988
- Gap-state distribution in n-type and p-type a-Si:H from optical absorptionJournal of Non-Crystalline Solids, 1987
- Band tails, entropy, and equilibrium defects in hydrogenated amorphous siliconPhysical Review Letters, 1987
- Structure and Electronic States in Disordered SystemsPhysical Review Letters, 1986
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982