GaAs/(GaAl)As LOC lasers grown by MOCVD
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 613-620
- https://doi.org/10.1016/0022-0248(86)90359-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Evidence for transient composition variations at GaAs/Ga1−xAlxAs heterostructure interfaces prepared by metal-organic chemical vapour depositionJournal of Electronic Materials, 1984
- Zinc Doping of MOCVD GaAsJournal of Crystal Growth, 1984
- Performance and characterization of GaAs-(GaAl)As double heterojunction lasers grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1981
- Narrow-beam five-layer (GaAl)As/GaAs heterostructure lasers with low threshold and high peak powerJournal of Applied Physics, 1976
- (GaAl)As lasers with a heterostructure for optical confinement and additional heterojunctions for extreme carrier confinementIEEE Journal of Quantum Electronics, 1973
- AN EFFICIENT LARGE OPTICAL CAVITY INJECTION LASERApplied Physics Letters, 1970