New capping technique for zone-melting recrystallization of silicon-on-insulator films
- 12 May 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (19) , 1300-1302
- https://doi.org/10.1063/1.96959
Abstract
A new capping technique employing high-temperature NH3 annealing has been developed to ensure uniform wetting by the molten Si zone during zone-melting recrystallization of Si-on-insulator films. By using this technique, we have reproducibly prepared 0.5-μm-thick films with 〈100〉 crystalline texture that are greatly improved in smoothness, void density, and thickness uniformity. In addition, recrystallized 1-μm-thick films have been obtained with large areas that are free of subboundaries, containing only threading dislocations at densities of less than 2×106 cm−2.Keywords
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