Laser-Oscillating-Mode Dependence of Temperature Distributions in Laser Annealing of Semiconductors
- 1 October 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (10R)
- https://doi.org/10.1143/jjap.22.1546
Abstract
The temperature distributions produced by a moving cw circular or elliptical laser beam oscillating in various modes are calculated in a semi-infinite material. The normalized linear temperature is calculated to cover a wide range of experimental conditions. As an example, the actual temperature for silicon is presented, taking the temperature dependence of the thermal conductivity into account. It is found that the use of a TEM01 or mixed TEM01+TEM10 mode laser is very effective in obtaining a concave or flat-top temperature distribution in the beam.Keywords
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