Minimization of Residual Stress in SOI Films by Using AlN Interlaid Insulator
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8A) , L669
- https://doi.org/10.1143/jjap.24.l669
Abstract
It was found that residual stress in SOI film recrystallized by laser annealing depends on both substrates and interlaid insulator materials. For a stress free Si film, a thermal expansion coefficient of the underlaid material, comprising of a substrate and an interlaid insulator should be slightly larger than that of Si. AlN found to be a very effective interlaid insulator. In the structure of resolidified-Si/3 µm thick insulator/Si substrate, the residual stress in SOI film on AlN (5×109 dyn/cm2) was lower than that on SiO2 (7×109 dyn/cm2).Keywords
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