A Singular Perturbation Analysis of the Fundamental Semiconductor Device Equations
- 1 October 1984
- journal article
- Published by Society for Industrial & Applied Mathematics (SIAM) in SIAM Journal on Applied Mathematics
- Vol. 44 (5) , 896-928
- https://doi.org/10.1137/0144064
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- A Singularly Perturbed Boundary Value Problem Modelling a Semiconductor DeviceSIAM Journal on Applied Mathematics, 1984
- A two-dimensional model of the avalanche effects in MOS transistorsSolid-State Electronics, 1982
- A time-dependent numerical model of the insulated-gate field-effect transistorSolid-State Electronics, 1981
- Elliptic Partial Differential Equations of Second OrderPublished by Springer Nature ,1977
- An Initial Value Problem from Semiconductor Device TheorySIAM Journal on Mathematical Analysis, 1974
- Semilinear elliptic boundary value problems with small parametersArchive for Rational Mechanics and Analysis, 1973
- On the computation of semiconductor device current characteristics by finite difference methodsJournal of Engineering Mathematics, 1973
- On equations describing steady‐state carrier distributions in a semiconductor deviceCommunications on Pure and Applied Mathematics, 1972
- An accurate numerical steady-state one-dimensional solution of the P-N junctionSolid-State Electronics, 1968
- Theory of the Flow of Electrons and Holes in Germanium and Other SemiconductorsBell System Technical Journal, 1950