Enhanced breakdown voltage in InP-HEMTs by usingan In 0.53 (Al x Ga 1– x ) 0.47 As( x = 0.1, 0.2) quaternary channel
- 25 September 1997
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 33 (20) , 1739-1740
- https://doi.org/10.1049/el:19971134
Abstract
An In0.53(AlxGa1–x)0.47As quaternary channel has been introduced into n+-InAlAs/InGaAs HEMTs. By adding a small amount of Al to the InGaAs channel, the bandgap can be enhanced, which provides a higher reversed gate-drain breakdown voltage. In addition, the associated impact ionisation process can be suppressed in these quaternary channels. These HEMTs have been demonstrated with a very low output conductance (4 mS/mm for x = 0.2) and a much smaller gate leakage current than conventional InP-HEMTs.Keywords
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