Characteristics of a In/sub 0.52/(Al/sub x/Ga/sub 1-x/)/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As(0≤x≤1) heterojunction and its application on HEMT's
- 1 May 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 44 (5) , 708-714
- https://doi.org/10.1109/16.568030
Abstract
No abstract availableKeywords
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