Minority carrier diffusion length and lifetime in GaN
- 15 June 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 72 (24) , 3166-3168
- https://doi.org/10.1063/1.121581
Abstract
Electron beam induced current measurements on planar Schottky diodes on undoped GaN grown by metalorganic chemical vapor deposition are reported. The minority carrier diffusion length of 0.28 μm has been measured, indicating minority carrier lifetime of 6.5 ns. The tapping mode atomic force microscopy imaging of the surfaces and scanning electron microscopy of the cross sections have been used to characterize the linear dislocations and columnar structure of the GaN. The possible influence of recombination on the extended defects in GaN on the minority carrier diffusion length and lifetime is discussed, and contrasted to other recombination mechanisms.Keywords
This publication has 16 references indexed in Scilit:
- LibraryMRS Bulletin, 1997
- Short channel AlGaN/GaN MODFET's with 50-GHz f/sub T/ and 1.7-W/mm output-power at 10 GHzIEEE Electron Device Letters, 1997
- Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxyApplied Physics Letters, 1997
- GaN based transistors for high temperature applicationsMaterials Science and Engineering: B, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hoursApplied Physics Letters, 1997
- Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor depositionApplied Physics Letters, 1997
- Design And Fabrication Of Nitride Based High Power DevicesMRS Proceedings, 1997
- Progress and prospects of group-III nitride semiconductorsProgress in Quantum Electronics, 1996
- High dislocation densities in high efficiency GaN-based light-emitting diodesApplied Physics Letters, 1995
- A SEM-EBIC minority-carrier diffusion-length measurement techniqueIEEE Transactions on Electron Devices, 1982