Activation energy for the photoluminescence W center in silicon
- 6 January 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (1) , 59-61
- https://doi.org/10.1063/1.107373
Abstract
This work presents a systematic study of the substrate temperature dependence for the formation of the photoluminescent W center during high energy self‐ion irradiation of silicon. All previous studies of this center were for postirradiation annealing, and we show that the formation is well described by a thermally activated process involving both the release of point defects from secondary defect complexes and the rate‐limited activation of the center itself. We deduce an activation energy of Ea∼0.85 eV for the growth of the W center, and discuss the relationship of this type of experiment to conventional annealing studies.Keywords
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