Defects in MBE-grown Silicon Epilayers Studied with Variable-Energy Positrons
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Photoluminescence studies of Si (100) doped with low-energy (≤1000 eV) As+ ions during molecular beam epitaxyApplied Physics Letters, 1989
- Using a hydrogen ambient to eliminate interfacial boron spikes in reduced temperature silicon epitaxyApplied Physics Letters, 1989
- Annealing studies of highly doped boron superlatticesJournal of Applied Physics, 1989
- Point-defect production in arsenic-doped silicon studied with variable-energy positronsApplied Physics A, 1989
- Defect profiling of semiconductor epilayers using positron beamsCanadian Journal of Physics, 1989
- Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic PositronsPhysical Review Letters, 1988
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988
- A variable-energy positron beam for low to medium energy researchNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- Formation of In-As Complexes in Silicon Observed by the Perturbed-Angular-Correlation TechniquePhysical Review Letters, 1986
- Positron trapping in electron-irradiated silicon crystalsApplied Physics A, 1980