Point-defect production in arsenic-doped silicon studied with variable-energy positrons
- 1 September 1989
- journal article
- Published by Springer Nature in Applied Physics A
- Vol. 49 (3) , 335-339
- https://doi.org/10.1007/bf00616864
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Defect profiling of semiconductor epilayers using positron beamsCanadian Journal of Physics, 1989
- I n s i t u doping by As ion implantation of silicon grown by molecular-beam epitaxyJournal of Applied Physics, 1988
- Defects and Impurities at the Si/Si(100) Interface Studied with Monoenergetic PositronsPhysical Review Letters, 1988
- Depth profile of vacancy-type defects in B+-implanted Si with a SiO2 overlayer by a variable-energy positron beamApplied Physics Letters, 1988
- Interaction of positron beams with surfaces, thin films, and interfacesReviews of Modern Physics, 1988
- Defect formation in H implantation of crystalline SiPhysical Review B, 1988
- A variable-energy positron beam for low to medium energy researchNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1988
- A low-energy metal-ion source for primary ion deposition and accelerated ion doping during molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1987
- Secondary implantation of Sb into Si molecular beam epitaxy layersApplied Physics Letters, 1985
- Potential enhanced Sb and As doping in Si molecular beam epitaxyApplied Physics Letters, 1985