High-Field Transport in the Three-Valley Conduction Band of Gallium Antimonide
- 15 January 1971
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 3 (2) , 420-426
- https://doi.org/10.1103/physrevb.3.420
Abstract
The characteristics of Te-doped GaSb have been measured up to a field strength of 18 kV/cm at 300°K and up to 7.5 kV/cm at 77°K. Results for the longitudinal magnetoresistance and the Hall constant at 300 and 77°K up to a field strength of about 7 kV/cm are given. Avalanche breakdown was observed at a field strength above 7 kV/cm, and the electron-hole pair generation rate at 300°K was determined. Calculations based on a three-band model are compared with the measurements. For high-field strengths the influence of the highest minimum has to be taken into account to obtain agreement between experimental and calculated results. Attempts have been made at an experimental realization of the negative differential resistance (NDR) predicated by Zaitsev and Zvezdin due to virtual states below the minimum. The effect, although observable, has been found to be not sufficient to produce NDR.
Keywords
This publication has 12 references indexed in Scilit:
- Infrared Faraday effect and electron transfer in many valley semiconductors : n GaSbPhysics Letters A, 1970
- Three-level oscillator: a new form of transferred-electron deviceElectronics Letters, 1970
- A Method for Subnanosecond Pulse Measurements of I-V CharacteristicsReview of Scientific Instruments, 1970
- High Electric Field Effects and Electron Transfer to Higher Conduction Band Minima in Gallium AntimonidePhysica Status Solidi (b), 1970
- The gunn effect and conduction band structure in GaxIn1−xSb alloysSolid State Communications, 1969
- Conduction-Band Structure of GaSb from Pressure Experiments to 50 kbarPhysical Review B, 1968
- Plasma Frequency as a Test of Intervalley Transfer in the Gunn EffectPhysical Review B, 1968
- Temperature Dependence of Carrier Concentrations and Conduction-Band Minima Separation of Gallium AntimonideJournal of Applied Physics, 1968
- The intervalley transfer mechanism of negative resistivity in bulk semiconductorsProceedings of the Physical Society, 1965
- Electrical properties of GaSb-InSb alloysJournal of Physics and Chemistry of Solids, 1960