The role of dissolved oxygen in hot water during dissolving oxides and terminating silicon surfaces with hydrogen
- 1 April 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 327 (1-2) , 1-8
- https://doi.org/10.1016/0039-6028(94)00805-1
Abstract
No abstract availableThis publication has 34 references indexed in Scilit:
- Atomic Step Structure on Vicinal H/Si(111) Surface Formed by Hot Water ImmersionJapanese Journal of Applied Physics, 1993
- In Situ STM Imaging of Silicon(111) in HF under Potential ControlJournal of the Electrochemical Society, 1992
- Atomic resolution images of H-terminated Si(111) surfaces in aqueous solutionsApplied Physics Letters, 1992
- Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling WaterJapanese Journal of Applied Physics, 1991
- Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivationPhysical Review Letters, 1990
- Effects of surface hydrogen on the air oxidation at room temperature of HF-treated Si (100) surfacesApplied Physics Letters, 1990
- Reaction of water with hydrofluoric acid treated silicon(111) and (100) surfacesJournal of Vacuum Science & Technology A, 1989
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986
- Evidence of dissociation of water on the Si(100)2 × 1 surfacePhysical Review B, 1984
- A Raman Study of Etching Silicon in Aqueous KOHJournal of the Electrochemical Society, 1983