Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water
- 1 December 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (12S) , 3575
- https://doi.org/10.1143/jjap.30.3575
Abstract
Aqueous HF etching of the silicon surface removes surface oxide, leaving a silicon surface terminated inhomogeneously by silicon mono-, di-, and trihydrides. We studied the effect of the immersion in water following the HF etching, on the surface hydride structure on Si(111), by measuring Si-H stretching vibration using infrared absorption spectroscopy. Immersion in boiling water (100°C) for 600 s produces a surface homogeneously terminated with silicon monohydride normal to the surface and free of oxidation. We concluded that water can remove silicon dihydride and trihydride and leave a silicon surface terminated with monohydride. The homogeneous surface has a low defect density of less than 0.5%.Keywords
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