Dependence of anomalous phosphorus diffusion in silicon on depth position of defects created by ion implantation
- 1 March 1989
- journal article
- solids and-materials
- Published by Springer Nature in Applied Physics A
- Vol. 48 (3) , 255-260
- https://doi.org/10.1007/bf00619395
Abstract
No abstract availableKeywords
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