Recrystallization kinetics pattern in III-V implanted semiconductors
- 8 June 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (23) , 1648-1650
- https://doi.org/10.1063/1.97756
Abstract
Solid phase epitaxial regrowth has been studied for a variety of ion-implanted compound semiconductors. The time-resolved reflectivity technique is used to determine growth kinetics. It is shown that the growth rate follows a thermal activation law whose activation energy and pre-exponential factor are measured. In all III-V compounds and alloys, a common regrowth kinetics behavior is found, with the activation energy proportional to a characteristic vibrational relaxation energy which also intervenes in the description of point defect migration. Differences with the case of column IV semiconductors are discussed.Keywords
This publication has 18 references indexed in Scilit:
- Jump dynamics and the isotope effect in solid-state diffusionPhysical Review Letters, 1986
- Damage calculation and measurement for GaAs amorphized by Si implantationApplied Physics Letters, 1986
- Solid phase epitaxial regrowth of ion-implanted amorphized InPApplied Physics Letters, 1986
- Direct measurement of solid-phase epitaxial growth kinetics in GaAs by time-resolved reflectivityJournal of Applied Physics, 1985
- Regrowth of Amorphized Compound SemiconductorsMRS Proceedings, 1985
- Critical implantation temperature and annealing of indium phosphideJournal of Vacuum Science and Technology, 1979
- Regrowth kinetics of amorphous Ge layers created by 74Ge and 28Si implantation of Ge crystalsSolid State Communications, 1977
- Reordering of implanted amorphous layers in gaasRadiation Effects, 1977
- Chaneling effect measurements of the recrystallization of amorphous Si layers on crystal SiPhysics Letters A, 1975
- Simple ballistic model for vacancy migrationPhysical Review B, 1975