Accurate design centering and yield prediction using the 'truth model' (FET model and MMIC design)
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1201-1204
- https://doi.org/10.1109/mwsym.1991.147235
Abstract
The truth model is introduced as the first implementation of a statistically validated GaAs FET simulation model. The authors examine the power and accuracy of the truth model by comparing the predicted and measured statistical response of a GaAs monolithic microwave integrated circuit (MMIC) 0.5-2.5 GHz amplifier. By design centering a small-signal amplifier both with and without the use of the truth model, it is shown that both yield estimates and the design center are affected by the accuracy of the device statistical model.> Author(s) Meehan, M.D. Wandinger, T. ; Fisher, D.A.Keywords
This publication has 3 references indexed in Scilit:
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