Interlayer interaction and exciton spectrum ofGaSe at low temperatures
- 1 April 1977
- journal article
- Published by Springer Nature in Il Nuovo Cimento B (1971-1996)
- Vol. 38 (2) , 469-477
- https://doi.org/10.1007/bf02723519
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Stimulated photoluminescence in GaSeJournal of Luminescence, 1976
- Donor-acceptor pair recombination and phonon replica in GaSxSe1−xJournal of Physics and Chemistry of Solids, 1975
- Resonant exciton in GaSePhysical Review B, 1975
- Near‐edge spontaneous photoluminescence in GaSe1–xSxPhysica Status Solidi (b), 1975
- Edge luminescence and light absorption in GaSxSe1−x solid solutions at low temperaturesPhysica Status Solidi (a), 1975
- Photoluminescence ofGaSeIl Nuovo Cimento B (1971-1996), 1974
- GaSe: A layer compound with anomalous valence band anisotropySolid State Communications, 1974
- The electronic structure of GaSeIl Nuovo Cimento B (1971-1996), 1973
- Anisotropy of excitons in semiconductorsIl Nuovo Cimento B (1971-1996), 1970
- Indirect Energy Gap in GaSe and GaSPhysica Status Solidi (b), 1969