Low energy BF2 implantation for the suppression of B penetration
- 19 May 1997
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 127-128, 406-409
- https://doi.org/10.1016/s0168-583x(96)00965-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- The effects of boron penetration on p/sup +/ polysilicon gated PMOS devicesIEEE Transactions on Electron Devices, 1990
- Optimization of the germanium preamorphization conditions for shallow-junction formationIEEE Transactions on Electron Devices, 1988
- Generalized scaling theory and its application to a ¼ micrometer MOSFET designIEEE Transactions on Electron Devices, 1984
- Boron, fluorine, and carrier profiles for B and BF2 implants into crystalline and amorphous SiJournal of Applied Physics, 1983
- Quantitative distribution analysis of dopant elements in silicon with SIMS for the improvement of process modellingAnalytical and Bioanalytical Chemistry, 1983