Photoluminescence characteristics and pit formation of InGaN/GaN quantum-well structures grown on sapphire substrates by low-pressure metalorganic vapor phase epitaxy
- 1 March 1999
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 28 (3) , 246-251
- https://doi.org/10.1007/s11664-999-0022-1
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Lasing mechanism of InGaN/GaN/AlGaN multiquantum well laser diodeApplied Physics Letters, 1998
- Formation Mechanism of Nanotubes in GaNPhysical Review Letters, 1997
- Compositional inhomogeneity and immiscibility of a GaInN ternary alloyApplied Physics Letters, 1997
- Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodesApplied Physics Letters, 1997
- Luminescences from localized states in InGaN epilayersApplied Physics Letters, 1997
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hoursApplied Physics Letters, 1997
- Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy compositionApplied Physics Letters, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996
- Wide-gap semiconductor InGaN and InGaAln grown by MOVPEJournal of Electronic Materials, 1992