Improvement of the optical and photoelectric properties of hydrogenated amorphous silicon-carbon alloys by using trisilylmethane as a feedstock
- 30 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (14) , 1720-1722
- https://doi.org/10.1063/1.106229
Abstract
Hydrogenated amorphous silicon‐carbon alloys (a‐SiC:H) with band gaps around 1.9 eV have been prepared using trisilylmethane (TSM) as the carbonsource by plasma‐enhanced chemical vapor deposition. Compared to a‐SiC:H alloys prepared from the conventional CH4/SiH4 mixture, the TSM‐based films show sharper optical‐absorption edge, weaker defect‐related optical absorption, lower methyl group concentration, longer ambipolar diffusion length, and higher photoconductivity.Keywords
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