Drain avalanche hot hole injection mode on PMOSFETs
- 6 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- The relationship between gate bias and hot-carrier-induced instabilities in buried- and surface-channel PMOSFETsIEEE Transactions on Electron Devices, 1988
- A novel dual p/sup -//p/sup +/ poly gate CMOS VLSI technologyIEEE Transactions on Electron Devices, 1988
- Hot-electron and hole-emission effects in short n-channel MOSFET'sIEEE Transactions on Electron Devices, 1985
- Effects of hot-carrier trapping in n- and p-channel MOSFET'sIEEE Transactions on Electron Devices, 1983
- Comparison of characteristics of n-channel and p-channel MOSFET's for VLSI'sIEEE Transactions on Electron Devices, 1983
- Interface states in MOSFETs due to hot-electron injection determined by the charge pumping techniqueElectronics Letters, 1981