A study of the properties of hydrogenated amorphous germanium produced by r.f. glow discharge as the electrode gap is varied the link between microstructure and optoelectronic properties
- 1 December 1991
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 64 (6) , 655-674
- https://doi.org/10.1080/13642819108207628
Abstract
Hydrogenated amorphous germanium films were deposited by r.f. glow discharge on the powered electrode of a diode-type deposition system. By varying the electrode gap D and keeping all other deposition parameters constant, a continuous monotonic change in both the optoelectronc and the structural properties of the films was observed. As D was decreased from 3.2 to 1.2 cm the product nμτ of the quantum efficiency n, mobility μ and lifetime τ increased from 2.1 × 10−9 to 1.7 × 10−7cm2 V−1, and the photoluminescence intensity increased. Other measurements taken indicate that changes in the electronic density of states cannot account for the observed improvement in the phototransport. Rather, we implicitly link this improvement to the observed changes in film structure. As D was decreased, the structure varied continuously from being heterogeneous of the order of 200 A and porous, to being homogeneous and non-porous. This change in structure was inferred from measurements of film stress, transmission electron microscopy, infrared transmission spectroscopy, gas evolution during controlled annealing and differential scanning calorimetry. The heterogeneous structure is interpreted in terms of a two-phase ‘island-tissue’ model that accounts for the observed changes in all the structural measurements as well as the deterioration in the optoelectronic properties. Such an island-tissue structure is probably caused by low surface mobility of adatoms arriving at the growing surface. Mechanisms involved in determining the surface mobility, and how they may change with D, are discussed. It is suggested that the ion bombardment plays a crucial role in eliminating the heterogeneities when considered with other deposition mechanisms. Measurements taken of the electrode bias voltages suggest that ion bombardment decreases with decreasing D.Keywords
This publication has 23 references indexed in Scilit:
- Surface kinetics and roughness on microstructure formation in thin filmsPhysical Review B, 1991
- Influence of Deposition Conditions on the optical and Electronic Properties of a-Ge:HMRS Proceedings, 1991
- DC Bias Effects on Growth of a-Ge:H in Coaxial-Type ECR PlasmaJapanese Journal of Applied Physics, 1989
- Comparison of the structural, electrical, and optical properties of amorphous silicon-germanium alloys produced from hydrides and fluoridesPhysical Review B, 1988
- Stresses and deformation processes in thin films on substratesCritical Reviews in Solid State and Materials Sciences, 1988
- Structural, electrical, and optical properties of a-:H and an inferred electronic band structurePhysical Review B, 1985
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980
- The hydrogen content of a-Ge:H and a-Si:H as determined by ir spectroscopy, gas evolution and nuclear reaction techniquesJournal of Non-Crystalline Solids, 1980
- Comments on the evidence for sharp and gradual optical absorption edges in amorphous germaniumPhysica Status Solidi (b), 1973
- The structural and optical properties of amorphous germaniumAdvances in Physics, 1973