The influence of oxygen on SiO2 sputtering
- 15 September 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 68 (6) , 2962-2965
- https://doi.org/10.1063/1.346431
Abstract
Argon‐ion sputtering of thin silicon dioxide films has been studied both in ultrahigh vacuum and in a low pressure oxygen ambient. The variation in ion‐induced secondary electron yield with decreasing oxide thickness was used to determine the sputtering yield. The method was found to be a simple and accurate way of i n s i t u measurement of thin‐film sputtering. A 30% decrease in sputtering yield was observed for 200‐keV Ar ion bombardment when the oxygen pressure was increased from 1×10−8 to 1×10−6 mbar. Secondary electron yield variations were found to give information also on the surface modification process. A mechanism is proposed in which oxygen is incorporated into the oxide due to the ion bombardment. Comparison with ion beam induced oxidation is also made.This publication has 16 references indexed in Scilit:
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