Electronic structure of (110) Ge-GaAs superlattices and interfaces
- 15 January 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 17 (2) , 672-674
- https://doi.org/10.1103/physrevb.17.672
Abstract
Ab initio energy-band calculations have been carried out for (110) Ge-GaAs superlattices containing 16 and 24 atoms per unit cell. Using the linear-combination-of-muffin-tin-orbitals method, the energy-level spectrum and local density of states were determined at selected points in the reduced zone. In agreement with earlier experimental findings, we find no evidence for well-defined localized interface states in the forbidden band.Keywords
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