Influence of illumination during thermal quenching and relaxation in undoped amorphous silicon

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Abstract
Thermal quenching and isothermal relaxation studies were performed on undoped hydrogenated amorphous silicon (a-Si:H). Experiments were made in the dark and under illumination of various intensities. AM-1 illumination during quenching was shown to decrease the freezing temperature of a-Si:H by about 10 °C. Short flashes of AM-1 illumination or much lower intensity dc illumination increase the rate of isothermal annealing of quenched defects. The results are consistent with an enhancement of the diffusion coefficient of hydrogen by illumination. However, it is shown that the relaxation results cannot be explained by complete rate equations.