The kink in the conductivity characteristics of undoped a-Si:H-a comprehensive picture

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Abstract
The authors study the well known kink in the Arrhenius plots of the DC conductivity of undoped hydrogenated silicon. The widespread transport model above a mobility edge is assumed and the possible explanations for the kink are reviewed. A careful analysis shows that only thermal-equilibrium processes can account for the author's present experimental data. Furthermore, they show that the kink temperature is the temperature at which the sample becomes frozen in a non-equilibrium configuration.