Transport mechanism and its relationship with heterogeneity in a-Si: H
- 28 February 1983
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 45 (7) , 591-594
- https://doi.org/10.1016/0038-1098(83)90433-7
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Characterized of glow-discharge deposited a-Si:HSolar Energy Materials, 1980
- Defect creation and hydrogen evolution in amorphous Si:HJournal of Non-Crystalline Solids, 1980
- Effects of partial evolution of H from a-Si:H on the infrared vibrational spectra and the photoluminescenceJournal of Non-Crystalline Solids, 1980
- Hydrogen evolution and defect creation in amorphous Si: H alloysPhysical Review B, 1979
- Kinetics of decomposition of amorphous hydrogenated silicon filmsJournal of Applied Physics, 1979
- Effect of adsorbed gases on the conductance of amorphous films of semiconducting silicon-hydrogen alloysApplied Physics Letters, 1978
- The use of nuclear reactions and SIMS for quantitative depth profiling of hydrogen in amorphous siliconApplied Physics Letters, 1977
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Quantitative analysis of hydrogen in glow discharge amorphous siliconApplied Physics Letters, 1977
- Substitutional doping of amorphous siliconSolid State Communications, 1975