Time dependence of switching oxide traps
Open Access
- 1 December 1994
- journal article
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 41 (6) , 1835-1843
- https://doi.org/10.1109/23.340515
Abstract
Metal-oxide semiconductor field-effect transistors (MOSFETs) were irradiated and then annealed under alternating positive and negative bias. The magnitude of the reversible trapped-oxide charge component decayed over the course of several cycles (of 3/spl times/10/sup 3/ s each) in one of two processes studied. The HDL hole trap model is shown to explain these and other recent results.Keywords
This publication has 30 references indexed in Scilit:
- Effects of oxide traps, interface traps, and ‘‘border traps’’ on metal-oxide-semiconductor devicesJournal of Applied Physics, 1993
- New insights into radiation-induced oxide-trap charge through thermally-stimulated-current measurement and analysis (MOS capacitors)IEEE Transactions on Nuclear Science, 1992
- A new MOS radiation-induced charge: negative fixed interface chargeIEEE Transactions on Nuclear Science, 1992
- 'Border traps' in MOS devicesIEEE Transactions on Nuclear Science, 1992
- Effect of bias on thermally stimulated current (TSC) in irradiated MOS devicesIEEE Transactions on Nuclear Science, 1991
- Radiation‐Induced Neutral Electron Trap Generation in Electrically Biased Insulated Gate Field Effect Transistor Gate InsulatorsJournal of the Electrochemical Society, 1991
- Correlating the Radiation Response of MOS Capacitors and TransistorsIEEE Transactions on Nuclear Science, 1984
- Radiation-Induced Defects in SiO2 as Determined with XPSIEEE Transactions on Nuclear Science, 1982
- Radiation-induced trapping centers in thin silicon dioxide filmsJournal of Non-Crystalline Solids, 1980
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967